Lock-in thermography with depth resolution on silicon solar cells
Breitenstein, O., Straube, H., Iwig, K.
Solar Energy Materials and Solar Cells 185, pp 66-74 (2018)
Lock-in thermography for analyzing solar cells and failure analysis in other electronic components
Breitenstein, O., Sturm, S.
Proceedings 14th Quantitative InfraRed Thermography Conference, pp 1-8 (2018)
Vanadium oxide bandstop tunable filter for Ka frequency bands based on a novel reconfigurable spiral shape defected ground plane CPW
Casu, E. A., Müller, A. A., Fernández-Bolanos, M., Fumarola, A., Krammer, A., Schuler, A., Ionescu, A. M.
IEEE Access (Special Section: Tunable devices for modern communications: materials, integration, modeling, and applications) 6, pp 12206-12212 (2018)
Nickel precipitation in light and elevated temperature degraded multicrystalline silicon solar cells
Deniz, H., Bauer, J., Breitenstein, O.
Solar RRL 1800170, pp 1800170/1-4 (2018)
Linking symmetry, crystallography, topology, and fundamental physics in crystalline solids
Derunova, E., Ali, M. N.
In: Symmetry (Group Theory) and Mathematical Treatment in Chemistry, pp 67-85 IntechOPen, 2018
Synthetic antiferromagnetic spintronics
Duine, R. A., Lee, K. J., Parkin, S. S. P., Stiles, M. D.
Nature Physics 14 (3), pp 217-219 (2018)
Injection intensity-dependent recombination at various grain boundary types in multicrystalline silicon solar cells
Frühauf, F., Altermatt, P. P., Luka, T., Mehl, T., Deniz, H., Breitenstein, O.
Solar Energy Materials and Solar Cells 180, pp 130-137 (2018)
Improved Laplacian photoluminescence image evaluation regarding the local diode back voltage distribution
Frühauf, F., Breitenstein, O.
Solar Energy Materials and Solar Cells 174, pp 277-282 (2018)
abstractLaplacian photoluminescence-based local diode voltage evaluation was shown recently to lead to correct mean values of the local saturation current density in mm-sized regions, but local maxima in the positions of recombination-active grain boundaries appear overestimated. It is shown here by 2-D device simulations that this effect is at least partly due to the influence of the local diode back voltage, which is caused by the voltage drop at the bulk and back contact resistances. Visually the image of this back voltage appears like a blurred copy of the local diode current density. It is shown in this work that indeed the diode back voltage can be simulated in good approximation by blurring the diode current image, which comes out of the Laplacian evaluation, multiplied with an effective vertical bulk resistance. The corresponding point spread function can be obtained e.g. by device simulation. An iterative procedure is proposed leading to self-consistent results for the diode current density and the diode back voltage. If this method is applied to simulated local cell data, the assumed distribution of the saturation current density is retrieved accurately. Applying this method to measured photoluminescence images leads to a better correspondence to non-linear Fuyuki PL evaluation results than the previously performed direct evaluation of the local diode voltage data. Remaining differences will be discussed.
Understanding phase-change materials with unexpectedly low resistance drift for phase-change memories
Li, C., Hu, C., Wang, J., Yu, X., Yang, Z., Liu, J., Li, Y., Bi, C., Zhou, X., Zheng, W.
Journal of Materials Chemistry C 6, pp 3387-3394 (2018)
Noncollinear antiferromagnetic Mn3Sn films
Markou, A., Taylor, J. M., Kalache, A., Werner, P., Parkin, S. S. P., Felser, C.
Physical Review Materials 2, pp 051001(R) (2018)
Reply to "Comment on 'Instability of the topological surface state in Bi2Se3 upon deposition of gold' "
Polyakov, A., Tusche, C., Ellguth, M, Crozier, E. D., Mohseni, K., Otrokov, M. M., Zubizarreta Iriarte, X., Garcia Vergniory, M., Geilhufe, M., Chulkov, E. V., Ernst, A., Meyerheim, H. L., Parkin, S.S.P.
Physical Review B 98 (13), pp 136202/1-4 (2018)
abstractIn the Comment on our publication [Phys. Rev. B 95, 180202(R) (2017)], R. A. Gordon claims that our main conclusion is not valid, namely that gold atoms deposited in situ on the (0001) surface of single-crystalline Bi2Se3 reside in substitutional sites, i.e., replacing bismuth atoms within the topmost quintuple layer (QL). Based on x-ray absorption near-edge (XANES) spectra and a re-evaluation of extended x-ray absorption fine structure (EXAFS) data above the Au LIII edge, R. A. Gordon concludes that Au resides in a twofold environment as a result of an interface reaction leading to an Au2S-type local structure, in which gold adopts an Au(I) state and is linearly coordinated by selenium atoms. In this Reply, we will confirm the results published in the original paper and their interpretation that Au atoms reside in the substitutional site.
High performance Al3Sc alloy doped Al3Sc-Sb2Te chalcogenides for phase change memory application
Zhang, S., Wu, L., Song, W., Zhou, X., Song, Z., Shi, J., Zhang, J., Feng, S.
Journal of Materials Chemistry C 6, pp 4177-4182 (2018)