Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range
Aseev, P., Soto Rodriguez, P. E. D., Gomez, V. J., Ul Hassan Alvi, N., Manuel, J. M., Morales, F. M., Jimenez, J. J., Garcia, R., Senichev, A., Lienau, C., Calleja, E., Nötzel, R.
Applied Physics Letters 106 (7), pp 072102/1-4 (2015)
Do lomer dislocations spoil high performance of mc-Si solar cells?
Bauer, J., Hähnel, A., Blumtritt, H., Deniz, H., Zuschlag, A., Breitenstein, O.
Energy Procedia 77, pp 565-571 (2015)
The reliabilty of thermography- and luminescence-based series resistance and saturation current density imaging
Breitenstein, O., Bauer, J., Hinken, D., Bothe, K.
Solar Energy Materials and Solar Cells 137, pp 50-60 (2015)
Towards an improved Laplacian-based photoluminescence image evaluation method
Breitenstein, O., Bauer, J., Hinken, D., Bothe, K.
Solar Energy Materials and Solar Cells 142, pp 92-101 (2015)
An empirical method for imaging the short-circuit current density in silicon solar cells based on dark lock-in thermography
Breitenstein, O., Fertig, F., Bauer, J.
Solar Energy Materials and Solar Cells 143, pp 406-410 (2015)
Fabrication and orientation control of highly cation-ordered epitaxial PbSc0.5O3 thin films on Si(100)
Chopra, A., Alexe, M., Hesse, D.
Journal of Applied Physics 117 (4), pp 044102/1-6 (2015)
Nanocrystalline ferroelectric BiFeO3 thin films by low-temperature atomic layer deposition
Coll, M., Gazquez, J., Fina, I., Khayat, Z., Quindeau, A., Alexe, M., Varela, M., Trolier-McKinstry, S., Obradors, X., Puig, T.
Chemistry of Materials 27, pp 6322-6328 (2015)
Strain dependence of antiferromagnetic interface coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices
Das, S., Herklotz, A., Pippel, E., Guo, E. J., Rata, D., Dörr, K.
Physical Review B 91 (13), pp 134405/1-7 (2015)
Microstructure and properties of epitaxial Sr2FeMoO6 films containing SrMoO4 precipitates
Deniz, H., Preziosi, D., Alexe, M., Hesse, D., Eisenschmidt, C., Schmidt, G., Pintilie, L.
Journal of Materials Science 50, pp 3131-3138 (2015)
Basics and prospective of magnetic Heusler compounds
Felser, C., Wollmann, L., Chadov, S., Fecher, G. H., Parkin, S. S. P.
APL Materials 3 (4), pp 041518/1-8 (2015)
In-plane tunneling field-effect transistor integrated on silicon
Fina, I., Apachitei, G., Preziosi, D., Deniz, H., Kriegner, D., Marti, X., Alexe, M.
Scientific Reports 5, pp 14367/1-7 (2015)
Influence of the doping level on the porosity of silicon nanowires prepared by metalassisted chemical etching
Geyer, N., Wollschläger, N., Fuhrmann, B., Tonkikh, A., Berger, A., Werner, P., Jungmann, M., Krause-Rehberg, R., Leipner, H. S.
Nanotechnology 26, pp 245301/1-7 (2015)
Self referencing heterodyne transient grating spectroscopy with short wavelength
Grilj, J., Sistrunk, E., Jeong, J., Samant, M. G., Gray, A. X., Dürr, H. A., Parkin, S. S. P., Gühr, M.
Photonics 2 (2), pp 392-401 (2015)
Ferroelectric 180° domain wall motion controlled by biaxial strain
Guo, E.-J., Roth, R., Herklotz, A., Hesse, D., Doerr, K.
Advanced Materials 27, pp 1615-1618 (2015)
Thermoelectric properties of band structure engineered topological insulator (Bi1−xSbx)2Te3 nanowires
Hamdou, B., Gooth, J., Böhnert, T., Dorn, A., Akinsinde, L., Pippel, E., Zierold, R., Nielsch, K.
Advanced Energy Materials 5 (15), pp 1500280/1-6 (2015)
Nanostruktur-Eigenschaftsbeziehungen in ferroelektrischen dünnen Oxidschichten
Hesse, D.
Morphologie und Mikrostruktur dünner Schichten und deren Beeinflussung, Dresden, Germany (2015)
Optical properties of epitaxial BiFeO3 thin films grown on LaAlO3
Himcinschi, C., Bhatnagar, A., Talkenberger, A., Barchuk, M., Zahn, D. R. T., Rafaja, D., Kortus, J., Alexe, M.
Applied Physics Letters 106 (1), pp 012908/1-5 (2015)
Short-circuit current density imaging via PL image evaluation based on implied voltage distribution
Höffler, H., Breitenstein, O., Haunschild, J.
IEEE Journal of Photovoltaics 5 (2), pp 613-618 (2015)
Interface Fe magnetic moment enhancement in MgO/Fe/MgO trilayers
Jal, E., Kortright, J. B, Chase, T., Liu, T. M., Gray, A. X., Shafer, P., Arenholz, E., Xu, P., Jeong, J., Samant, M. G., Parkin, S. S. P., Dürr, H. A.
Applied Physics Letters 107 (9), pp 092404/1-4 (2015)
Giant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid gating
Jeong, J., Aetukuri, N. B., Passarello, D., Conradson, S. D., Samant, M. G., Parkin, S. S. P.
Proceedings of the National Academy of Sciences of the United States of America 112 (4), pp 1013-1018 (2015)
Nanodomains and nanometer-scale disorder in multiferroic bismuth ferrite single crystals
Jia, C.-L., Jin, L., Wang, D., Mi, S.-B., Alexe, M., Hesse, D., Reichlova, H., Marti, X., Bellaiche, L., Urban, K. W.
Acta Materialia 82, pp 356-368 (2015)
Fine-grained BaTiO3-MgFe2O4 composites prepared by a Pechini-like process
Köferstein, R., Walther, T., Hesse, D., Ebbinghaus, S. G.
Journal of Alloys and Compounds 638, pp 141-147 (2015)
Dual gate control of bulk transport and magnetism in the spin-orbit insulator Sr2IrO4
Lu, C., Dong, S., Quindeau, A., Preziosi, D., Hu, N., Alexe, M.
Physical Review B 91 (10), pp 104401/1-9 (2015)
Prospect of antiferromagnetic spintronics
Marti, X., Fina, I., Jungwirth, T.
IEEE Transactions on Magnetics 51 (4), pp 2900104/1-4 (2015)
Ultra-long zinc oxide nanowires and boron doping based on ionic liquid assisted thermal chemical vapor deposition growth
Menzel, A., Komin, K., Yang, Y., Güder, F., Trouillet, V., Werner, P., Zacharias, M.
Nanoscale 7, pp 92-97 (2015)
Atomic-scale structure and properties of epitaxial PbZr0.2Ti0.8O3/SrRuO3 heterointerfaces
Mi, S.-B., Jia, C.-L., Vrejoiu, I., Alexe, M., Hesse, D.
Advanced Materials Interfaces 2, pp 1500087/1-6 (2015)
Nanoscopic studies of 2D-extended defects in silicon that cause shunting of Si-solar cells
Naumann, V., Lausch, D., Hähnel, A., Breitenstein, O., Hagendorf, C.
Physica Status Solidi C 12, pp 1103-1107 (2015)
Memory on the racetrack
Parkin, S. S. P., Yang, S.-H.
Nature Nanotechnology 10, pp 195-198 (2015)
Influence of cracks on the local current-voltage parameters of silicon solar cells
Pletzer, T. M., van Mölken, J. I., Rißland, S., Breitenstein, O., Knoch, J.
Progress in Photovoltaics: Research and Applications 23 (4), pp 428-436 (2015)
Electric-field control of the orbital occupancy and magnetic moment of a transition-metal oxide
Preziosi, D., Alexe, M., Hesse, D., Salluzzo, M.
Physical Review Letters 115 (15), pp 157401/1-5 (2015)
Highly efficient thermal spin torque assisted magnetic tunnel junction switching
Pushp, A., Phung, T., Rettner, C., Hughes, B. P., Yang, S.-H., Parkin, S. S. P.
Proceedings of the National Academy of Sciences 112 (21), pp 6585-6590 (2015)
Origin of tunnel electroresistance effect in PbTiO3-based multiferroic tunnel junctions
Quindeau, A., Borisov, V. S., Fina, I., Ostanin, S., Pippel, E., Mertig, I., Hesse, D., Alexe, M.
Physical Review B 92 (3), pp 035130/1-7 (2015)
abstractThe mechanism of the tunnel electroresistance effect of a Co/PbTiO3/La0.7Sr0.3MnO3 multiferroic tunnel junction is studied in detail using experimental and theoretical methods. Based on experimental data, we present a model that explains the correlation between the polarization of the ferroelectric material and the observed resistance state based on the effective change of the tunnel barrier thickness.We show that the observed thickness variation can neither be completely attributed to the asymmetric inverse piezoelectric effect in the classical sense, nor to asymmetric screening of the polarization charge. The analysis of detailed ab initio calculations quantitatively demonstrates that a mixture of electronic and structural phenomena is responsible for the change in effective tunnel barrier thickness upon polarization reversal. On the one hand, the ferroelectric material exhibits a reversible metallization at one of the interfaces, which shifts the boundary between the ferroelectric material and the electrode. On the other hand, a piezoelectric effect that stems from different terminations of the ferroelectric ultrathin film towards the electrodes magnifies this effect. Combined, the electrically switchable effective change in thickness is as large as 0.15 nm, which dominates the resistive switching effect in the presented junction that involves a 3.2 nm thin PbTiO3 film. Thiswork contributes to the deeper understanding of fundamental mechanisms that lead to tunnel electroresistance and imposes new ways for tailoring the characteristics of electroresistive tunnel junctions.
Four-state ferroelectric spin-valve
Quindeau, A., Fina, I., Marti, X., Apachitei, G., Ferrer, P., Nicklin, C., Pippel, E., Hesse, D., Alexe, M.
Scientific Report 5, pp 09749/1-7 (2015)
The predominance of substrate induced defects in magnetic properties of Sr2FeMoO6 thin films
Saloaro, M., Deniz, H., Huhtinen, H., Palonen, H., Majumdar, S., Paturi, P.
Journal of Physics: Condensed Matter 27, pp 386001/1-11 (2015)
Tracking atomic processes throughout the formation of heteroepitaxial interfaces
Scheerschmidt, K., Moutanabbir, O.
Crystal Research and Technology 50 (6), pp 490-498 (2015)
Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal candidate NbP
Shekhar, C., Nayak, A. K., Sun, Y., Schmidt, M., Nicklas, M., Leermnakers, I., Zeitler, U., Skourski, Y., Wosnitza, J., Liu, Z., Chen, Y., Schnelle, W., Borrmann, H., Grin, Y., Felser, C., Yan, B.
Nature Physics 11 (8), pp 645 - 650 (2015)
abstractRecent experiments have revealed spectacular transport properties in semimetals, such as the large, non-saturating magnetoresistance exhibited by WTe2 (ref. 1).Topological semimetals with massless relativistic electrons have also been predicted2 as three-dimensional analogues of graphene3. These systems are known as Weyl semimetals, and are predicted to have a range of exotic transport properties and surface states4−7, distinct from those of topological insulators8,9. Here we examine the magneto-transport properties of NbP, a material the band structure of which has been predicted to combine the hallmarks of a Weyl semimetal10,11 with those of a normal semimetal. We observe an extremely large magnetoresistance of 850,000at 1.85 K (250% at room temperature) in a magnetic field of up to 9 T, without any signs of saturation, and an ultrahigh carrier mobility of 5 x 106 cm2 V−1 s−1 that accompanied by strong Shubnikov-de Haas (SdH) oscillations. NbP therefore presents a unique example of a material combining topological and conventional electronic phases, with intriguing physical properties resulting from their interplay.
Broadband extreme ultraviolet probing of transient grating in vanadium dioxide
Sistrunk, E., Grilj, J., Jeong, J., Samant, M. G., Gray, A. X., Dürr, H. A., Parkin, S. S. P., Gühr, M.
Optics Express 23 (4), pp 4340-4347 (2015)
Photoinduced-mid-infrared intraband light absorption and photocoductivity in Ge/Si quantum dots
Sofronov, A. N., Vorobjev, L. E., Firsov, D. A., Panevin, V. Y., Balagula, R. M., Werner, P., Tonkikh, A. A.
Superlattices and Microstructures 87, pp 53-57 (2015)
Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)
Soto Rodriguez, P. E. D., Aseev, P., Gomez, V. J., Kumar, P., Ul Hassan Alvi, N., Calleja, E., Manuel, J. M., Morales, F. M., Jimenez, J. J., Garcia, R., Senichev, A., Lienau, C., Nötzel, R.
Applied Physics Letters 106 (2), pp 023105/1-4 (2015)
Ex post manipulation of barriers in InGaAs tunnel injection devices
Talalaev, V. G., Cirlin, G. E., Novikov, B. V., Fuhrmann, B., Werner, P., Tomm, J. W.
Applied Physics Letters 106 (1), pp 013104/1-5 (2015)
Ex post manipulation of barriers in InGaAs tunnel injection devices
Talalaev, V. G., Cirlin, G. E., Novikov, B. V., Fuhrmann, B., Werner, P., Tomm, J. W.
Applied Physics Letters 106 (1), pp 013104/1-5 (2015)
Raman spectroscopic investigations of epitaxial BiFeO3 thin films on rare earth scandate substrates
Talkenberger, A., Vrejoiu, I., Johann, F., Röder, C., Irmer, G., Rafaja, D., Schreiber, G., Kortus, J., Himcinschi, C.
Journal of Raman Spectroscopy 46, pp 1245-1254 (2015)
SnSi nanocrystals of zinc-blende structure in a Si matrix
Tonkikh, A., Klavsyuk, A., Zakharov, N., Saletsky, A., Werner, P.
Nano Research 8 (12), pp 3905-3911 (2015)
Electron microscope analyses of the bio-silica basal spicule from the Monorhaphis chuni sponge
Werner, P., Blumtritt, H., Zlotnikov, I., Graff, A., Dauphin, Y., Fratzl, P.
Journal of Structural Biology 191, pp 165-174 (2015)
Formation of size-controlled and luminescent Si nanocrystals from SiOxNy/Si3N4 hetero-superlattices
Zelenina, A., Sarikov, A., Gutsch, S., Zakharov, N., Werner, P., Reichert, A., Weiss, C., Zacharias, M.
Journal of Applied Physics 117, pp 4321 (2015)
High efficiency Cu-ZnO hydrogenation catalyst: The tailoring of Cu-ZnO interface sites by molecular layer deposition
Zhang, B., Chen, Y., Li, J., Pippel, E., Yang, H., Gao, Z., Qin, Y.
ACS Catalysis 5, pp 5567-5573 (2015)
Role of transparency of platinum-ferromagnet interfaces in determining the intrinsic magnitude of the spin Hall effect
Zhang, W., Han, W., Jiang, X., Yang, S.-H., Parkin, S. S. P.
Nature Physics 11 (6), pp 496-502 (2015)
Epitaxial growth of vertically free-standing ultra-thin silicon nanowires
Zhou, Q., Liu, L., Gao, X., Chen, L., Senz, S., Zhang, Z., Liu, J.
Nanotechnology 26 (7), pp 075707/1-8 (2015)