Publications

Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

Aseev, P., P. E. D. Soto Rodriguez, V. J. Gomez, N. Ul Hassan Alvi, J. M. Manuel, F. M. Morales, J. J. Jimenez, R. Garcia, A. Senichev, C. Lienau, E. Calleja, R. Nötzel

Applied Physics Letters 106 (7), pp 072102/1-4 (2015)

Do lomer dislocations spoil high performance of mc-Si solar cells?

Bauer, J., A. Hähnel, H. Blumtritt, H. Deniz, A. Zuschlag, O. Breitenstein

Energy Procedia 77, pp 565-571 (2015)

The reliabilty of thermography- and luminescence-based series resistance and saturation current density imaging

Breitenstein, O., J. Bauer, D. Hinken, K. Bothe

Solar Energy Materials and Solar Cells 137, pp 50-60 (2015)

Towards an improved Laplacian-based photoluminescence image evaluation method

Breitenstein, O., J. Bauer, D. Hinken, K. Bothe

Solar Energy Materials and Solar Cells 142, pp 92-101 (2015)

An empirical method for imaging the short-circuit current density in silicon solar cells based on dark lock-in thermography

Breitenstein, O., F. Fertig, J. Bauer

Solar Energy Materials and Solar Cells 143, pp 406-410 (2015)

Fabrication and orientation control of highly cation-ordered epitaxial PbSc_0.5O₃ thin films on Si(100)

Chopra, A., M. Alexe, D. Hesse

Journal of Applied Physics 117 (4), pp 044102/1-6 (2015)

Nanocrystalline ferroelectric BiFeO₃ thin films by low-temperature atomic layer deposition

Coll, M., J. Gazquez, I. Fina, Z. Khayat, A. Quindeau, M. Alexe, M. Varela, S. Trolier-McKinstry, X. Obradors, T. Puig

Chemistry of Materials 27, pp 6322-6328 (2015)

Strain dependence of antiferromagnetic interface coupling in La_0.7Sr_0.3MnO₃/SrRuO₃ superlattices

Das, S., A. Herklotz, E. Pippel, E. J. Guo, D. Rata, K. Dörr

Physical Review B 91 (13), pp 134405/1-7 (2015)

Microstructure and properties of epitaxial Sr₂FeMoO₆ films containing SrMoO₄ precipitates

Deniz, H., D. Preziosi, M. Alexe, D. Hesse, C. Eisenschmidt, G. Schmidt, L. Pintilie

Journal of Materials Science 50, pp 3131-3138 (2015)

Basics and prospective of magnetic Heusler compounds

Felser, C., L. Wollmann, S. Chadov, G. H. Fecher, S. S. P. Parkin

APL Materials 3 (4), pp 041518/1-8 (2015)

In-plane tunneling field-effect transistor integrated on silicon

Fina, I., G. Apachitei, D. Preziosi, H. Deniz, D. Kriegner, X. Marti, M. Alexe

Scientific Reports 5, pp 14367/1-7 (2015)

Influence of the doping level on the porosity of silicon nanowires prepared by metalassisted chemical etching

Geyer, N., N. Wollschläger, B. Fuhrmann, A. Tonkikh, A. Berger, P. Werner, M. Jungmann, R. Krause-Rehberg, H. S. Leipner

Nanotechnology 26, pp 245301/1-7 (2015)

Self referencing heterodyne transient grating spectroscopy with short wavelength

Grilj, J., E. Sistrunk, J. Jeong, M. G. Samant, A. X. Gray, H. A. Dürr, S. S. P. Parkin, M. Gühr

Photonics 2 (2), pp 392-401 (2015)

Ferroelectric 180^° domain wall motion controlled by biaxial strain

Guo, E.-J., R. Roth, A. Herklotz, D. Hesse, K. Doerr

Advanced Materials 27, pp 1615-1618 (2015)

Thermoelectric properties of band structure engineered topological insulator (Bi_1−xSb_x)₂Te₃ nanowires

Hamdou, B., J. Gooth, T. Böhnert, A. Dorn, L. Akinsinde, E. Pippel, R. Zierold, K. Nielsch

Advanced Energy Materials 5 (15), pp 1500280/1-6 (2015)

Nanostruktur-Eigenschaftsbeziehungen in ferroelektrischen dünnen Oxidschichten

Hesse, D.

Morphologie und Mikrostruktur dünner Schichten und deren Beeinflussung, Dresden, Germany (2015)

Optical properties of epitaxial BiFeO₃ thin films grown on LaAlO₃

Himcinschi, C., A. Bhatnagar, A. Talkenberger, M. Barchuk, D. R. T. Zahn, D. Rafaja, J. Kortus, M. Alexe

Applied Physics Letters 106 (1), pp 012908/1-5 (2015)

Short-circuit current density imaging via PL image evaluation based on implied voltage distribution

Höffler, H., O. Breitenstein, J. Haunschild

IEEE Journal of Photovoltaics 5 (2), pp 613-618 (2015)

Interface Fe magnetic moment enhancement in MgO/Fe/MgO trilayers

Jal, E., J. B Kortright, T. Chase, T. M. Liu, A. X. Gray, P. Shafer, E. Arenholz, P. Xu, J. Jeong, M. G. Samant, S. S. P. Parkin, H. A. Dürr

Applied Physics Letters 107 (9), pp 092404/1-4 (2015)

Giant reversible, facet-dependent, structural changes in a correlated-electron insulator induced by ionic liquid gating

Jeong, J., N. B. Aetukuri, D. Passarello, S. D. Conradson, M. G. Samant, S. S. P. Parkin

Proceedings of the National Academy of Sciences of the United States of America 112 (4), pp 1013-1018 (2015)

Nanodomains and nanometer-scale disorder in multiferroic bismuth ferrite single crystals

Jia, C.-L., L. Jin, D. Wang, S.-B. Mi, M. Alexe, D. Hesse, H. Reichlova, X. Marti, L. Bellaiche, K. W. Urban

Acta Materialia 82, pp 356-368 (2015)

Fine-grained BaTiO₃-MgFe₂O₄ composites prepared by a Pechini-like process

Köferstein, R., T. Walther, D. Hesse, S. G. Ebbinghaus

Journal of Alloys and Compounds 638, pp 141-147 (2015)

Dual gate control of bulk transport and magnetism in the spin-orbit insulator Sr₂IrO₄

Lu, C., S. Dong, A. Quindeau, D. Preziosi, N. Hu, M. Alexe

Physical Review B 91 (10), pp 104401/1-9 (2015)

Prospect of antiferromagnetic spintronics

Marti, X., I. Fina, T. Jungwirth

IEEE Transactions on Magnetics 51 (4), pp 2900104/1-4 (2015)

Ultra-long zinc oxide nanowires and boron doping based on ionic liquid assisted thermal chemical vapor deposition growth

Menzel, A., K. Komin, Y. Yang, F. Güder, V. Trouillet, P. Werner, M. Zacharias

Nanoscale 7, pp 92-97 (2015)

Atomic-scale structure and properties of epitaxial PbZr_0.2Ti_0.8O₃/SrRuO₃ heterointerfaces

Mi, S.-B., C.-L. Jia, I. Vrejoiu, M. Alexe, D. Hesse

Advanced Materials Interfaces 2, pp 1500087/1-6 (2015)

Nanoscopic studies of 2D-extended defects in silicon that cause shunting of Si-solar cells

Naumann, V., D. Lausch, A. Hähnel, O. Breitenstein, C. Hagendorf

Physica Status Solidi C 12, pp 1103-1107 (2015)

Memory on the racetrack

Parkin, S. S. P., S.-H. Yang

Nature Nanotechnology 10, pp 195-198 (2015)

Influence of cracks on the local current-voltage parameters of silicon solar cells

Pletzer, T. M., J. I. van Mölken, S. Rißland, O. Breitenstein, J. Knoch

Progress in Photovoltaics: Research and Applications 23 (4), pp 428-436 (2015)

Electric-field control of the orbital occupancy and magnetic moment of a transition-metal oxide

Preziosi, D., M. Alexe, D. Hesse, M. Salluzzo

Physical Review Letters 115 (15), pp 157401/1-5 (2015)

Highly efficient thermal spin torque assisted magnetic tunnel junction switching

Pushp, A., T. Phung, C. Rettner, B. P. Hughes, S.-H. Yang, S. S. P. Parkin

Proceedings of the National Academy of Sciences 112 (21), pp 6585-6590 (2015)

Origin of tunnel electroresistance effect in PbTiO₃-based multiferroic tunnel junctions

Quindeau, A., V. S. Borisov, I. Fina, S. Ostanin, E. Pippel, I. Mertig, D. Hesse, M. Alexe

Physical Review B 92 (3), pp 035130/1-7 (2015)

abstract

The mechanism of the tunnel electroresistance effect of a Co/PbTiO₃/La_0.7Sr_0.3MnO₃ multiferroic tunnel junction is studied in detail using experimental and theoretical methods. Based on experimental data, we present a model that explains the correlation between the polarization of the ferroelectric material and the observed resistance state based on the effective change of the tunnel barrier thickness.We show that the observed thickness variation can neither be completely attributed to the asymmetric inverse piezoelectric effect in the classical sense, nor to asymmetric screening of the polarization charge. The analysis of detailed ab initio calculations quantitatively demonstrates that a mixture of electronic and structural phenomena is responsible for the change in effective tunnel barrier thickness upon polarization reversal. On the one hand, the ferroelectric material exhibits a reversible metallization at one of the interfaces, which shifts the boundary between the ferroelectric material and the electrode. On the other hand, a piezoelectric effect that stems from different terminations of the ferroelectric ultrathin film towards the electrodes magnifies this effect. Combined, the electrically switchable effective change in thickness is as large as 0.15 nm, which dominates the resistive switching effect in the presented junction that involves a 3.2 nm thin PbTiO3 film. Thiswork contributes to the deeper understanding of fundamental mechanisms that lead to tunnel electroresistance and imposes new ways for tailoring the characteristics of electroresistive tunnel junctions.

Four-state ferroelectric spin-valve

Quindeau, A., I. Fina, X. Marti, G. Apachitei, P. Ferrer, C. Nicklin, E. Pippel, D. Hesse, M. Alexe

Scientific Report 5, pp 09749/1-7 (2015)

The predominance of substrate induced defects in magnetic properties of Sr₂FeMoO₆ thin films

Saloaro, M., H. Deniz, H. Huhtinen, H. Palonen, S. Majumdar, P. Paturi

Journal of Physics: Condensed Matter 27, pp 386001/1-11 (2015)

Tracking atomic processes throughout the formation of heteroepitaxial interfaces

Scheerschmidt, K., O. Moutanabbir

Crystal Research and Technology 50 (6), pp 490-498 (2015)

Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal candidate NbP

Shekhar, C., A. K. Nayak, Y. Sun, M. Schmidt, M. Nicklas, I. Leermnakers, U. Zeitler, Y. Skourski, J. Wosnitza, Z. Liu, Y. Chen, W. Schnelle, H. Borrmann, Y. Grin, C. Felser, B. Yan

Nature Physics 11 (8), pp 645 - 650 (2015)

abstract

Recent experiments have revealed spectacular transport properties in semimetals, such as the large, non-saturating magnetoresistance exhibited by WTe₂ (ref. 1).Topological semimetals with massless relativistic electrons have also been predicted² as three-dimensional analogues of graphene³. These systems are known as Weyl semimetals, and are predicted to have a range of exotic transport properties and surface states⁴⁻⁷, distinct from those of topological insulators^8,9. Here we examine the magneto-transport properties of NbP, a material the band structure of which has been predicted to combine the hallmarks of a Weyl semimetal^10,11 with those of a normal semimetal. We observe an extremely large magnetoresistance of 850,000at 1.85 K (250% at room temperature) in a magnetic field of up to 9 T, without any signs of saturation, and an ultrahigh carrier mobility of 5 x 10⁶ cm² V⁻¹ s⁻¹ that accompanied by strong Shubnikov-de Haas (SdH) oscillations. NbP therefore presents a unique example of a material combining topological and conventional electronic phases, with intriguing physical properties resulting from their interplay.

Broadband extreme ultraviolet probing of transient grating in vanadium dioxide

Sistrunk, E., J. Grilj, J. Jeong, M. G. Samant, A. X. Gray, H. A. Dürr, S. S. P. Parkin, M. Gühr

Optics Express 23 (4), pp 4340-4347 (2015)

Photoinduced-mid-infrared intraband light absorption and photocoductivity in Ge/Si quantum dots

Sofronov, A. N., L. E. Vorobjev, D. A. Firsov, V. Y. Panevin, R. M. Balagula, P. Werner, A. A. Tonkikh

Superlattices and Microstructures 87, pp 53-57 (2015)

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

Soto Rodriguez, P. E. D., P. Aseev, V. J. Gomez, P. Kumar, N. Ul Hassan Alvi, E. Calleja, J. M. Manuel, F. M. Morales, J. J. Jimenez, R. Garcia, A. Senichev, C. Lienau, R. Nötzel

Applied Physics Letters 106 (2), pp 023105/1-4 (2015)

Ex post manipulation of barriers in InGaAs tunnel injection devices

Talalaev, V. G., G. E. Cirlin, B. V. Novikov, B. Fuhrmann, P. Werner, J. W. Tomm

Applied Physics Letters 106 (1), pp 013104/1-5 (2015)

Ex post manipulation of barriers in InGaAs tunnel injection devices

Talalaev, V. G., G. E. Cirlin, B. V. Novikov, B. Fuhrmann, P. Werner, J. W. Tomm

Applied Physics Letters 106 (1), pp 013104/1-5 (2015)

Raman spectroscopic investigations of epitaxial BiFeO₃ thin films on rare earth scandate substrates

Talkenberger, A., I. Vrejoiu, F. Johann, C. Röder, G. Irmer, D. Rafaja, G. Schreiber, J. Kortus, C. Himcinschi

Journal of Raman Spectroscopy 46, pp 1245-1254 (2015)

SnSi nanocrystals of zinc-blende structure in a Si matrix

Tonkikh, A., A. Klavsyuk, N. Zakharov, A. Saletsky, P. Werner

Nano Research 8 (12), pp 3905-3911 (2015)

Electron microscope analyses of the bio-silica basal spicule from the Monorhaphis chuni sponge

Werner, P., H. Blumtritt, I. Zlotnikov, A. Graff, Y. Dauphin, P. Fratzl

Journal of Structural Biology 191, pp 165-174 (2015)

Formation of size-controlled and luminescent Si nanocrystals from SiO_xN_y/Si₃N₄ hetero-superlattices

Zelenina, A., A. Sarikov, S. Gutsch, N. Zakharov, P. Werner, A. Reichert, C. Weiss, M. Zacharias

Journal of Applied Physics 117, pp 4321 (2015)

High efficiency Cu-ZnO hydrogenation catalyst: The tailoring of Cu-ZnO interface sites by molecular layer deposition

Zhang, B., Y. Chen, J. Li, E. Pippel, H. Yang, Z. Gao, Y. Qin

ACS Catalysis 5, pp 5567-5573 (2015)

Role of transparency of platinum-ferromagnet interfaces in determining the intrinsic magnitude of the spin Hall effect

Zhang, W., W. Han, X. Jiang, S.-H. Yang, S. S. P. Parkin

Nature Physics 11 (6), pp 496-502 (2015)

Epitaxial growth of vertically free-standing ultra-thin silicon nanowires

Zhou, Q., L. Liu, X. Gao, L. Chen, S. Senz, Z. Zhang, J. Liu

Nanotechnology 26 (7), pp 075707/1-8 (2015)