Ustinov, V. M., Egorov, A. Y., Zhukov, A. E., Kovsh, A. R., Ledentsov, N. N., Maximov, M. V., Volovik, B. V., Tsatsulnikov, A. F., Kop'ev, P. S., Alferov, Zh. I., Soshnikov, I.P., Zakharov, N. D., Werner, P. and Bimberg, D.
Journal of Crystal Growth 202, pp 1143-1145 (1999) Photoluminescence (PL) of self-organized InAs quantum dots (QDs) grown by conventional solid source molecular beam epitaxy (MBE) on a GaAs substrate was studied as a function of the deposition temperature. We have found that decreasing the growth temperature below the 480-500 degrees C range leads to the appearance and increase in intensity of a long wavelength band in addition to the usual 1 mu m line in a low-temperature PL spectrum. At the deposition temperature of 300 degrees C this line dominates in the room temperature (RT) PL spectrum and its peak position is 1.75 m m. TEM studies have shown that the origin of this line are agglomerates of QDs which are formed in two preferential chain- and cluster-like shapes. (C) 1999 Elsevier Science B.V. All rights reserved. [References: 3]
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