Tsatsulnikov, A. F., Volovik, B. V., Ledentsov, N. N., Maximov, M. V., Egorov, A. Y., Kovsh, A. R., Ustinov, V. M., Zhukov, A. E., Kop'ev, P. S., Alferov, Zh. I., Kozin, I. A., Belousov, M. V., Soshnikov, I.P., Werner, P., Litvinov, D., Fischer, U., Rosenauer, A. and Gerthsen, D.
Journal of Electronic Materials 28, (5), pp 537-541 (1999) Structural and optical properties of structures with nanoscale InAs islands obtained by submonolayer deposition and embedded in an AlxGa1-xAs matrix is investigated. Deposition of several planes of InAs insertions results in formation of arrays of vertically correlated islands. The lateral size of the islands in a column is about 10 nm. Lasing via the ground states of the islands without external optical confinement is demonstrated. [References: 17]