Tong, Q.-Y., Chao, Y.- L., Huang, L.-J. and Gösele, U.
Electronics Letters 35, (4), pp 341-342 (1999) High quality single crystalline 3 in Inp thin layers were transferred onto oxidised Si substrates at 150 degrees C by wafer bonding and layer splitting from InP wafers which were co-implanted by B and H ions with the H implantation performed at 90 degrees C. [References: 9]