Photoconductive properties of SrBi2Ta2O9 thin films in the 250-400 nm wavelength range were investigated. The films were deposited on Pt/SiO2/Si substrates using the Chemical Solution Deposition and were crystallized by conventional thermal annealing at 850 degrees C. One sensitivity maximum was observed in the spectral distribution of the photoconductive signal and was attributed to band-to-band generation in the film. The wavelength corresponding to this maximum was found to be dependent on the applied voltage, on the delay time, defined as the time between the application of light on the film and the reading of the generated photocurrent, and on the wavelengths sweeping direction tug or down). The gap value was estimated to be around 3.94-4 eV. (C) 1999 Elsevier Science Limited. All rights reserved. [References: 17]

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