Maximov, M. V., Tsatsulnikov, A. F., Volovik, B. V., Bedarev, D. A., Egorov, A. Y., Zhukov, A. E., Kovsh, A. R., Bert, N. A., Ustinov, V. M., Kop'ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D., Soshnikov, I.P. and Werner, P.
Applied Physics Letters 75, (16), pp 2347-2349 (1999) We demonstrate the possibility of extending the spectral range of luminescence due to InAs quantum dots (QDs) in a GaAs matrix up to 1.7 mm. Realization of such a long wavelength emission is related to formation of lateral associations of QDs during InAs deposition at low substrate temperatures (similar to 320-400 degrees C). (C) 1999 American Institute of Physics. [S0003-6951(99)00242-9]. [References: 9]
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