Damage occurs in MeV-ion-implanted Si not only at the projected ion range, R_P, but also around R_P/2 after annealing. A convenient way to detect this damage is to decorate it with metal atoms and to measure the metal distribution. Up to now no structural defects have been seen in the R_P/2 region. In this study the trapping of Cu atoms at R_P/2 is investigated in dependence on ion dose and energy. A high concentration of O impurities has been found to suppress the Cu gettering. No vacancy-like defects could be detected by positron annihilation spectroscopy after annealing at high temperatures of T>850^°C. Instead, interstitial-type defects have been observed at R_P/2 using cross section transmission electron microscopy of specimen prepared under suitable conditions.

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