Defects in high energy ion implanted silicon have been investigated, especially in the depth range around half of the projected ion range R-P/2 after annealing at temperatures between 700 and 1000 degrees C. Preferable trapping of metals just in this depth range proves the existence of defects there. No vacancy-like defects could be detected by variable energy positron annihilation spectroscopy after annealing at temperatures T > 800 degrees C. Instead, interstitial-type defects were observed in the R-P/2 region using cross section transmission electron microscopy of a specimen prepared under special conditions. The results indicate the presence of small interstitial agglomerates at R-P/2 which remain after high temperature annealing. (C) 1999 American Institute of Physics. [S0003-6951(99)03135-6]. [References: 28]

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