Kapteyn, C. M. A., Heinrichsdorff, F., Stier, O., Heitz, R., Grundmann, M., Zakharov, N. D., Bimberg, D. and Werner, P.
Physical Review B 60, (20), pp 14265-14268 (1999) We identify fundamental mechanisms of electron escape from self-organized InAs quantum dots (QD's) in a vertical electric field by time-resolved capacitance spectroscopy. Direct tunneling and a thermally activated escape process are observed. The QD electron ground and first-excited states are concluded to be located similar to 190 and similar to 96 meV below the GaAs matrix conduction band, respectively. Our experimental results and their interpretation are in good agreement with eight-band k.p calculations and demonstrate the importance of tunnel processes. [S0163-1829(99)01344-2]. [References: 33]
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