Huang, L.-J., Tong, Q.-Y. and Gösele, U.
Electrochemical & Solid State Letters 2, (5), pp 238-239 (1999) Blistering and splitting in hydrogen-implanted single crystalline LaAlO3 and Al2O3 are demonstrated based on the Smart-Cut(R) method with optimal implantation temperature and hydrogen dose. Thin layers of monocrystalline LaAlO3 and sapphire were transferred onto target substrates. This approach may have significant potential in fabricating new materials combinations such as monocrystalline superconductor thin films on semiconductor substrates. (C) 1999 The Electrochemical Society. S1099-0062(98)-12-062-X. All rights reserved. [References: 7]