Egorov, A. Y., Kovsh, A. R., Ustinov, V. M., Zhukov, A. E., Maximov, M. V., Cirlin, G. E., Ledentsov, N. N., Bimberg, D., Werner, P. and Alferov, Zh. I.
Journal of Crystal Growth 202, pp 1202-1204 (1999) Self-organized three-dimensional InAs islands matching the QD size requirements were fabricated by solid source MBE in a silicon matrix on Si(1 0 0) surface. The PL line originating from this islands was observed at about 1.3 mu m up to the room temperature. (C) 1999 Elsevier Science B.V. All rights reserved. [References: 3]
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