Self-organized InAs quantum dots in a silicon matrix

Egorov, A. Y., Kovsh, A. R., Ustinov, V. M., Zhukov, A. E., Maximov, M. V., Cirlin, G. E., Ledentsov, N. N., Bimberg, D., Werner, P. and Alferov, Zh. I.

Journal of Crystal Growth 202, pp 1202-1204 (1999)

Self-organized three-dimensional InAs islands matching the QD size requirements were fabricated by solid source MBE in a silicon matrix on Si(1 0 0) surface. The PL line originating from this islands was observed at about 1.3 mu m up to the room temperature. (C) 1999 Elsevier Science B.V. All rights reserved. [References: 3]

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