Molecular beams of size-selected silicon clusters were used to grow nanocrystalline thin films. This technique allows the control of both average size and size dispersion of Si nanocrystals, and is then very useful to provide model materials for the study of the luminescence in silicon. We report results obtained by high-resolution electron microscopy, Raman spectrometry and photoluminescence spectroscopy.

Full text :PDF (279 kB)( for personal use only)