Cirlin, G. E., Polyakov, N. K., Petrov, V. N., Egorov, V. A., Samsonenko, Y. B., Denisov, D. V., Busov, V. M., Volovik, B. V., Ustinov, V. M., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D., Zakharov, N. D. and Werner, P.
Czechoslovak Journal of Physics 49, (11), pp 1547-1552 (1999) In this paper we have studied the island formation during InAs/Si(100) three dimensional (3D) heteroepitaxial growth using RHEED, SEM and TEM methods. We have found the strong influence of the growth conditions on the surface morphology. Both an important role during the growth in InAs/Si are formed at the Si(100) when lateral size is less kinetic and energetic parameters play system. Dislocation-free InAs islands then 5 nm. [References: 15]
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