Zeng, J. M., Lin, C. L., Zheng, L. R., Pignolet, A., Alexe, M., Richter, E. and Hesse, D.
Nuclear Instruments & Methods in Physics Research, Section B 147, (1-4), pp 207-211 (1999) The effect on the crystalline structure and ferroelectric properties of ion implantation in SrBi2Ta2O9(SBT) ferroelectric thin films has been investigated. 25 keV H+, 140 keV O+ with doses from 1x10(14)/cm(2) to 3x10(15)/cm(2) were implanted into the Sol-Gel prepared SET ferroelectric thin films. The X-ray diffraction patterns of SET films show that no difference appears in the crystalline structure of as-H+-implanted SET films compared with as-grown films, H+ and Of co-implanted SET films show an obvious degradation of crystalline structure. Ferroelectric properties measurements indicate that both remnant polarization and coercive electric field of H+ implanted SET films decrease with increasing the implantation dose. The disappearance of ferroelectricity was found in the H+, O+ coimplanted SET films at room temperature. The great recovery of hydrogen-induced degradation in SET films was obtained with O+ implantation using a heat-target-implantation technique. (C) 1999 Elsevier Science B.V. All rights reserved. [References: 12]
Full text :PDF (298 kB)( for personal use only)