Akatsu, T., Plößl, A., Stenzel, H. and Gösele, U.:
GaAs wafer bonding by atomic hydrogen surface cleaning
Journal of Applied Physics 86, (12), pp 7146-7150 (1999)

Akatsu, T., Plößl, A., Stenzel, H. and Gösele, U.:
Wafer bonding of compound semiconductors using atomic hydrogen.
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 60-67 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Alexe, M. and Gösele, U.:
Wafer contamination protection by direct wafer bonding and air jet debonding.
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 195-199 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Alexe, M., Gruvermann, A., Harnagea, C., Zakharov, N. D., Pignolet, A., Hesse, D. and Scott, J. F.:
Switching properties of self-assembled ferroelectric memory cells
Applied Physics Letters 75, (8), pp 1158-1160 (1999)

Alexe, M., Harnagea, C., Hesse, D. and Gösele, U.:
Patterning and switching of nano-size ferroelectric memory cells
Applied Physics Letters 75, (12), pp 1793-1795 (1999)

Alexe, M., Kopperschmidt, P., Gösele, U., Tong, Q.-Y. and Huang, L.-J.:
Wafer bonding involving complex oxides
Materials Research Society Symposium Proceedings 574, pp 285-292 (1999)

Alexe, M., Senz, S., Pignolet, A., Hesse, D. and Gösele, U.:
Direct wafer bonding and layer transfer - a new approach to integration of ferroelectric oxides into silicon technology
Ferroelectrics 231, (1-4), pp 169-178 (1999)

Alexe, M., Senz, S., Pignolet, A., Hesse, D. and Gösele, U.:
Structural and electrical properties of metal-ferroelectric-silicon heterostructures fabricated by a direct wafer bonding and layer transfer process
Ferroelectrics 225, pp 75-82 (1999)

Alexe, M., Senz, S., Pignolet, A., Hesse, D. and Gösele, U.:
Direct wafer bonding and layer transfer for ferroelectric thin film integration
Integrated Ferroelectrics 27, pp 205-211 (1999)

Alexe, M.:
Nanoelectronics needs new materials
Physics World 12, (1), pp 21-22 (1999)

Bagdahn, J., Plößl, A., Wiemer, M. and Petzold, M.:
Measurement of local strength distribution of directly bonded silicon wafers using the micro-chevron-test
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 218-223 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Belov, A. Y. and Scheerschmidt, K.:
Atomic structures of dislocation intersections at (001) low-angle twist and shear boundaries in silicon
Philosophical Magazine Letters 79, (3), pp 107-114 (1999)

Belov, A. Y., Scheerschmidt, K. and Gösele, U.:
Extended point defect structures at intersections of screw dislocations in Si: A molecular dynamics study
Physica Status Solidi A 171, (1), pp 159-166 (1999)

Belov, A. Y., Scholz, R. and Scheerschmidt, K.:
Dissociation of screw dislocations in (001) low-angle twist boundaries: a source of the 30 degrees partial dislocations in silicon
Philosophical Magazine Letters 79, (8), pp 531-538 (1999)

Bert, N. A., Chaldyshev, V. V., Musikhin, Y. G., Suvorova, A. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R. and Werner, P.:
In-Ga intermixing in low-temperature grown GaAs delta doped with In
Applied Physics Letters 74, (10), pp 1442-1444 (1999)

Bert, N. A., Chaldyshev, V. V., Suvorova, A. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R. and Werner, P.:
Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
Applied Physics Letters 74, (11), pp 1588-1590 (1999)

Birner, A., Busch, K. and Müller, F.:
Photonische Kristalle
Physikalische Blätter 55, (4), pp 27-33 (1999)

Birner, A.:
Laserlicht aus porösen Strukturen
Physikalische Blätter 55, (7/8), pp 17-18 (1999)

Breitenstein, O. and Langenkamp, M.:
Quantitative local analysis of I-V characteristics of solar cells by thermal methods
Proceedings of the 2^nd World Conference on Photovoltaic Energy Conversion pp 1382-1385 (Eds.) Schmid, J., Ossenbrink, H. A., Helm, P. and Dunlop, E. D., Joint Research Centre of European Commission, Luxembourg, Luxembourg (1999)

Breitenstein, O., Langenkamp, M., Lang, O. and Schirrmacher, A.:
Shunts due to laser-scribing of solar cells evaluated by highly sensitive lock-in thermography
Technical Digest of the 11^th International Photovoltaic Science and Engineering Conference (PVSEC-11) pp 285-286 (Ed.) Saitoh, T., Tanaka Ltd., Kyoto, Japan (1999)

Bringezu, K., Lichtenberger, O., Leopold, I. and Neumann, D.:
Heavy metal tolerance of Silene vulgaris
Journal of Plant Physiology 154, pp 536-546 (1999)

Chaldyshev, V. V., Faleev, N. N., Bert, N. A., Musikhin, Y. G., Kunitsyn, A. E., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R. and Werner, P.:
Ordered arrays of arsenic clusters coincided with InAs GaAs superlattices grown by low-temperature MBE
Journal of Crystal Growth 202, pp 260-262 (1999)

Chaldyshev, V. V., Faleev, N. N., Musikhin, Y. G., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R. and Werner, P.:
Artificial superlattices of As cluster in GaAs
Proceedings of the 2^nd Symposium on Non-Stoichiometric III-V Compounds, 10, pp 127-132 (Eds.) Kiesel, P., Malzer, S. and Marek, T., Lehrstuhl für Mikrocharakterisierung, Friedrich-Alexander-Universität, Erlangen-Nürnberg, Germany (1999)

Chen, C.-H., Gösele, U. and Tan, T.-Y.:
Dopant diffusion and segregation in semiconductor heterostructures. Part 3. Diffusion of Si into GaAs
Applied Physics A 69, pp 313-321 (1999)

Chen, C.-H., Gösele, U. and Tan, T.-Y.:
Dopant diffusion and segregation in semiconductor heterostructures: Part I. Zn and Be in III-V compound superlattices
Applied Physics A 68, (1), pp 9-18 (1999)

Chen, C.-H., Gösele, U. and Tan, T.-Y.:
Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures
Applied Physics A 68, (1), pp 19-24 (1999)

Chen, C.-H., Gösele, U. and Tan, T.-Y.:
Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs
Journal of Applied Physics 86, (10), pp 5376-5384 (1999)

Cirlin, G. E., Polyakov, N. K., Petrov, V. N., Egorov, V. A., Samsonenko, Y. B., Denisov, D. V., Busov, V. M., Volovik, B. V., Ustinov, V. M., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D., Zakharov, N. D. and Werner, P.:
Effect of growth conditions on InAs nanoislands formation on Si(100) surface
Czechoslovak Journal of Physics 49, (11), pp 1547-1552 (1999)

Claus, P. and Hofmeister, H.:
Electron microscopy and catalytic study of silver catalysts: Structure sensitivity of the hydrogenation of crotonaldehyde
Journal of Physical Chemistry B 103, (14), pp 2766-2775 (1999)

Dragoi, V. and Alexe, M.:
Cobalt-manganese oxide thin films thermistor obtained by MOD
Proceedings of the 21^th Annual Conference on Semiconductors (CAS'98) 1, pp 297-300 IEEE, New York, USA (1999)

Dragoi, V., Alexe, M., Reiche, M. and Gösele, U.:
Low temperature direct wafer bonding of silicon using a glass intermediate layer
Proceedings of the 22^nd Annual Conference on Semiconductors (CAS'99) 2, pp 443-446 IEEE Cat. No. 99TH8389, Sinaia, Romania (1999)

Dragoi, V., Alexe, M., Reiche, M. and Gösele, U.:
Low temperature Si-Si and GaAs-Si direct wafer bonding using spin-on glass intermediate layer
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 80-84 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Edelmann, F., Raz, T., Komem, Y., Stolzer, M., Werner, P., Zaumseil, P., Osten, H. J., Griesche, J. and Capitan, M.:
Stability and transport properties of microcrystalline Si_1-xGe_x films
Thin Solid Films 337, (1-2), pp 152-157 (1999)

Egorov, A. Y., Kovsh, A. R., Ustinov, V. M., Zhukov, A. E., Maximov, M. V., Cirlin, G. E., Ledentsov, N. N., Bimberg, D., Werner, P. and Alferov, Zh. I.:
Self-organized InAs quantum dots in a silicon matrix
Journal of Crystal Growth 202, pp 1202-1204 (1999)

Ehbrecht, M., Hofmeister, H., Laguna, M. A., Kohn, B., Paillard, V. and Huisken, F.:
Laser-induced production and characterization of crystalline silicon nanoparticles with narrow size distribution
Surface Engineering: Science and Technology I pp 241-248 (Eds.) Kumar, A. P. S., Chung, Y.-W., Moore, J. J. and Smugeresky, J.E., The Minerals, Metals \& Materials Society, Warrendale, USA (1999)

Engler, N., Leipner, H. S., Scholz, R. F., Werner, P., Syrowatka, F., Schreiber, J. and Gösele, U.:
Investigations of extended defects after sulfur diffusion in GaAs
Solid State Phenomena 69-70, pp 443-448 (1999)

Feldhoff, A., Pippel, E. and Woltersdorf, J.:
Structure and composition of ternary carbides in carbon-fibre reinforced Mg-Al alloys
Philosophical Magazine A 79, (6), pp 1263-1277 (1999)

Feldhoff, A., Pippel, E. and Woltersdorf, J.:
Carbon-fibre reinforced magnesium alloys: nanostructure and chemistry of interlayers and their effect on mechanical properties
Journal of Microscopy 196, (Part 2), pp 185-193 (1999)

Gruvermann, A., Hironaka, K., Ikeda, Y., Satyalakshmi, K. M., Pignolet, A., Alexe, M., Zakharov, N. D. and Hesse, D.:
SFM characterization of SrBi₂Ta₂O₉ thin films for nanoscale memory applications
Integrated Ferroelectrics 27, pp 159-169 (1999)

Gryaznov, V. G., Heydenreich, J., Kaprelov, A. M., Nepijko, S. A., Romanov, A. E. and Urban, J.:
Pentagonal symmetry and disclinations in small particles
Crystal Research and Technology 34, (9), pp 1091-1119 (1999)

Gösele, U., Bluhm, Y., Kästner, G., Kopperschmidt, P., Kräuter, G., Scholz, R., Schumacher, A., Senz, S., Tong, Q.-Y., Huang, L.-J., Chao, Y.- L. and Lee, T.H.:
Fundamental issues in wafer bonding
Journal of Vacuum Science & Technology A 17, (4 Part 1), pp 1145-1152 (1999)

Gösele, U., Tong, Q.-Y., Schumacher, A., Kräuter, G., Reiche, M., Plößl, A., Kopperschmidt, P., Lee, T.H. and Kim, W. J.:
Wafer bonding for microsystems technologies
Sensors and Actuators, A 74, (1-3), pp 161-168 (1999)

Harnagea, C., Pignolet, A., Alexe, M., Satyalakshmi, K. M., Hesse, D. and Gösele, U.:
Nanoscale switching and domain structure of ferroelectric BaBi₄Ti₄O₁₅ thin films
Japanese Journal of Applied Physics, Pt. 2 38, (11A), pp L1255-L1257 (1999)

Hesse, D., Graff, A. and Senz, S.:
Reaktionsfronten von Festkörperreaktionen. In: Struktur und Dynamik nanoskopischer Inhomogenitäten in kondensierter Materie
In: Bericht 1996-1999 des Sonderforschungsbereiches 418, Halle 1999 pp 9-45 Martin-Luther-Universität, Halle, Germany 1999

Hesse, D., Graff, A., Senz, S. and Zakharov, N. D.:
Topotaxial reaction fronts in complex Ba-Ti-Si oxide systems studied by transmission electron microscopy
Materials Science Forum 294-296, pp 597-600 (1999)

Hesse, D., Graff, A., Sieber, H., Senz, S., Werner, P. and Zakharov, N. D.:
Inorganic solid state reactions studied by transmission electron microscopy: Phase formation, interface structures and reaction mechanisms
Proceedings of the VII^th European Conference on Solid State Chemistry (ECSSC'99) 1, pp (2 pages) (Ed.) Gonzáles-Calbet, J. M., Universidad Complutense, Madrid, Spain (1999)

Hillebrand, R., Hergert, W. and Harms, W.:
Photonic band structures of 2d non-circular air lattices in Si
European Materials Research Society Proceedings pp K-IV.5 (1999)

Hofmeister, H. and Ködderitzsch, P.:
Nanosized silicon particles by inert gas arc evaporation
Nanostructured Materials 12, (1-4 Part A), pp 203-206 (1999)

Hofmeister, H., Drost, W. G. and Berger, A.:
Oriented prolate silver particles in glass - Characteristics of novel dichroic polarizers
Nanostructured Materials 12, (1-4 Part A), pp 207-210 (1999)

Hofmeister, H., Huisken, F. and Kohn, B.:
Lattice contraction in nanosized silicon particles produced by laser pyrolysis of silane
European Physical Journal D 9, pp 137-140 (1999)

Hofmeister, H.:
Fivefold twinning in nanosized particles and nanocrystalline thin films - ubiquituous metastable structures
Materials Science Forum pp 313-314 (1999)

Hofmeister, H.:
Fivefold twinning in nanosized particles and nanocrystalline thin films - ubiquituous metastable structures
Journal of Metastable and Nanocrystalline Materials pp 325-332 (1999)

Holz, T., Dietsch, R., Mai, H., Brüggemann, L., Hopfe, S., Scholz, R., Krawietz, R. and Wehner, B.:
Pulsed laser deposition of laterally graded Ni/C-multilayers and their application in parallel beam X-ray optics
Advances in X-Ray Analysis 41, pp 346-355 (1999)

Huang, L.-J., Tong, Q.-Y. and Gösele, U.:
Critical bonding energy required for hydrogen-implantation induced layer splitting
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 68-79 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Huang, L.-J., Tong, Q.-Y. and Gösele, U.:
Hydrogen-implantation induced blistering and layer transfer of LaAlO₃ and sapphire
Electrochemical & Solid State Letters 2, (5), pp 238-239 (1999)

Huang, L.-J., Tong, Q.-Y., Chao, Y.- L., Lee, T.H., Martini, T. and Gösele, U.:
Onset of blistering in hydrogen-implanted silicon
Applied Physics Letters 74, (7), pp 982-984 (1999)

Kabisch, O., Gille, W., Simmich, O., Scholz, R., Cisach, R., Dutkiewicz, J. and Król, J.:
Structure changes and kinetics of precipitation in AlCuAgMg alloys
Proceedings of the International Conference on Light Alloys and Composites pp 103-109 (Eds.) Dutkiewicz, J., Pietrowski, S., Pisaek, B. and Wladysiak, R., Wykonano w Akademickim Centrum, Lodz, Poland (1999)

Kahler, U. and Hofmeister, H.:
Silicon nanocrystallites in buried SiO_x layers via direct wafer bonding
Applied Physics Letters 75, (5), pp 641-643 (1999)

Kapteyn, C. M. A., Heinrichsdorff, F., Stier, O., Heitz, R., Grundmann, M., Zakharov, N. D., Bimberg, D. and Werner, P.:
Electron escape from InAs quantum dots
Physical Review B 60, (20), pp 14265-14268 (1999)

Kirmse, H., Neumann, W., Wiebach, T., Köhler, R., Scheerschmidt, K. and Conrad, D.:
Interpretation von TEM-Beugungskontrast-Abbildungen von CdSe-Quantenpunkten
Zeitschrift für Kristallographie 16, pp 169-170 (1999)

Kirmse, H., Schneider, R., Scheerschmidt, K., Conrad, D. and Neumann, W.:
TEM characterization of self-organized CdSe/ZnSe quantum dots
Journal of Microscopy 194, (Part 1), pp 183-191 (1999)

Kittler, M., Breitenstein, O., Endös, A. and Schröter, W.:
Beam injection assessment of defects in semiconductors
Trans. Tech. Publ., Enfield, United Kingdom (1999)

Konovalov, I. and Breitenstein, O.:
Evaluation of thermographic investigation of solar cells by spatial deconvoluation
Proceedings of the 2^nd World Conference on Photovoltaic Energy Conversion pp 148-151 (Eds.) Schmid, J., Ossenbrink, H. A., Helm, P. and Dunlop, E. D., Joint Research Centre of European Commission, Luxembourg, Luxembourg (1999)

Konovalov, I., Tober, O., Winkler, M., Senz, S. and Otte, K.:
Characterization of Cu-In-S absorber structure obtained by CiSCuT
Technical Digest of the 11^th International Photovoltaic Science and Engineering Conference (PVSEC-11) pp 619-620 printed by Tanaka Printing Co. Ltd., Kyoto, Japan, (1999)

Kopperschmidt, P., Luan, H.-C. and Kimerling, L. C.:
Recent developments in adhesion-enhanced high-vacuum bonding by in situ plasma surface precleaning.
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 259-264 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Kopperschmidt, P., Senz, S., Scholz, R. and Gösele, U.:
Compliant twist-bonded GaAs substrates: The potential role of pinholes
Applied Physics Letters 74, (3), pp 374-376 (1999)

Kopperschmidt, P., Senz, S., Scholz, R., Kästner, G., Gösele, U., Velling, P., Prost, W., Tegude, F.-J., Gottschalch, V. and Wada, K.:
Strain relaxation during heteroepitaxy on twist-bonded thin gallium arsenide substrates
Materials Research Society Symposium Proceedings 535, pp 45-50 (1999)

Kräuter, G. and Bluhm, Y.:
Interface chemistry of tailor-made monolayers for low temperature wafer bonding.
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 275-281 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Kräuter, G., Bluhm, Y., Batz Sohn, Ch. and Gösele, U.:
The joining of parallel plates via organic monolayers: Chemical reactions in a spatially confined system
Advanced Materials 11, (12), pp 1035-1038 (1999)

Kästner, G. and Messerschmidt, U.:
A 1000 kV TEM running over 25 years
JEOL News, Electron Optics Instrumentation 34, (No. 1), pp 24-28 (1999)

Kästner, G., Schäfer, C., Senz, S. and Hesse, D.:
HTSL-Systeme in der Satellitenkommunikation: Mikrostrukturelle Funktionsdiagnostik von HTSL-Hochfrequenzbauelementen
In: Forschungsbericht 13 N 6832/5 pp 91 Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie, 1999

Kästner, G., Schäfer, C., Senz, S., Hesse, D., Lorenz, M., Hochmuth, H., Getta, M., Hein, M. A., Kaiser, T. and Müller, G.:
Microstructure and microwave surface resistance of YBaCuO thin films
IEEE Transactions on Applied Superconductivity 9, (2 Part 2), pp 2171-2174 (1999)

Kästner, G., Schäfer, C., Senz, S., Kaiser, T., Hein, M. A., Lorenz, M., Hochmuth, H. and Hesse, D.:
Microstructure and microwave surface resistance of typical YBaCuO thin films on sapphire and LaAlO₃
Superconductor Science & Technology 12, (6), pp 366-375 (1999)

Kästner, G.:
Vom ``Ansprengen'' zum ``Absprengen''
Physikalische Blätter 55, pp 51-53 (1999)

Kögler, R., Peeva, A., Anwand, W., Brauer, G., Skorupa, W., Werner, P. and Gösele, U.:
Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon
Applied Physics Letters 75, (9), pp 1279-1281 (1999)

Kögler, R., Peeva, A., Anwand, W., Werner, P., Danilin, A. B. and Skorupa, W.:
Gettering centres for metals and oxygen formed in MeV-ion-implanted and annealed silicon
Solid State Phenomena 69-70, pp 235-240 (1999)

Laguna, M. A., Paillard, V., Kohn, B., Ehbrecht, M., Huisken, F., Ledoux, G., Papoular, R. and Hofmeister, H.:
Optical properties of nanocrystalline silicon thin films produced by size-selected cluster beam deposition
Journal of Luminescence 80, pp 223-228 (1999)

Langenkamp, M. and Breitenstein, O.:
Fast shunt hunting in solar cells with highly sensitive lock-in thermography
Proceedings of the 9th Workshop on Crystalline Solar cell Materials and processes pp 198-201 (Ed.) Sopori, B.L., NREL, Golden, USA (1999)

Langenkamp, M. and Breitenstein, O.:
Influence of the lock-in frequency on shunt measurements in solar cells using contact thermography
Proceedings of the 2^nd World Conference on Photovoltaic Energy Conversion pp 1371-1381 (Eds.) Schmid, J., Ossenbrink, H. A., Helm, P. and Dunlop, E. D., Joint Research Centre of European Commission, Luxembourg, Luxembourg (1999)

Langer, J., Kräußlich, J., Mattheis, R., Senz, S. and Hesse, D.:
Characterisation of interfacial properties in sputtered Co/Cu multilayers: X-ray reflectometry compared with TEM and AFM
Journal of Magnetism and Magnetic Materials 198-199, pp 644-646 (1999)

Leipner, H. S., Scholz, R. F., Engler, N., Börner, F., Werner, P. and Gösele, U.:
Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion
Physica B 273-274, pp 697-700 (1999)

Leipner, H. S., Scholz, R. F., Syrowatka, F., Schreiber, J. and Werner, P.:
Copper diffusion in dislocation-rich gallium arsenide
Philosophical Magazine A 79, (11), pp 2785-2802 (1999)

Leonard, S. W., van Driel, H. M., Busch, K., John, S., Birner, A., Li, A.-P., Müller, F., Gösele, U. and Lehmann, V.:
Attenuation of optical transmission within the band gap of thin two-dimensional macroporous silicon photonic crystals
Applied Physics Letters 75, (20), pp 3063-3065 (1999)

Li, A.-P., Müller, F., Birner, A., Nielsch, K. and Gösele, U.:
Fabrication and microstructuring of hexagonally ordered two-dimensional nanopore arrays in anodic alumina
Advanced Materials 11, (6), pp 483-487 (1999)

Li, A.-P., Müller, F., Birner, A., Nielsch, K. and Gösele, U.:
Polycrystalline nanopore arrays with hexagonal ordering on aluminum
Journal of Vacuum Science & Technology A 17, (4 Part 1), pp 1428-1431 (1999)

Lindner, R., Reichling, M., Matthias, E. and Johansen, H.:
Luminescence and damage thresholds of cerium-doped LaF₃ for ns-pulsed laser excitation at 248 nm
Applied Physics B 68, (2), pp 233-241 (1999)

Markowitz, A., Rebohle, L., Hofmeister, H. and Skorupa, W.:
Homogeneously size distributed Ge nanoclusters embedded in SiO₂ layers produced by ion beam synthesis
Nuclear Instruments & Methods in Physics Research, Section B 147, (1-4), pp 361-366 (1999)

Martini, T., Hopfe, S., Mack, S. and Gösele, U.:
Wafer bonding across surface steps in the nanometer range
Sensors and Actuators, A 75, (1), pp 17-23 (1999)

Maximov, M. V., Tsatsulnikov, A. F., Volovik, B. V., Bedarev, D. A., Egorov, A. Y., Zhukov, A. E., Kovsh, A. R., Bert, N. A., Ustinov, V. M., Kop'ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D., Soshnikov, I.P. and Werner, P.:
Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 mm
Applied Physics Letters 75, (16), pp 2347-2349 (1999)

Mohr, Ch., Hofmeister, H., Lucas, M. and Claus, P.:
Gold-Katalysatoren für die partielle Hydrierung von Acrolein
Chemie Ingenieur Technik 71, pp 869-873 (1999)

Möller, H. J., Long, L., Werner, M. and Yang, D.:
Oxygen and carbon precipitation in multicrystalline solar silicon
Physica Status Solidi A 171, (1), pp 175-189 (1999)

Müller, F., Birner, A., Gösele, U. and Lehmann, V.:
Two-dimension photonic crystals based on macroporous silicon
Proceedings of the 6th National Meeting on Light Emitting Silicon pp 5 p (Eds.) Di Francia, G., Maddalena, P. and Ninno, D., Instituto Nazionale de Fisica della Materia, Naples, Italy (1999)

Neumann, W., Kirmse, H., Schneider, R., Scheerschmidt, K., Conrad, D., Wiebach, T. and Köhler, R.:
Computer-aided analysis of TEM micrographs of CdSe quantum on ZnSe.
Institute of Physics Conference Series pp 145-148 (1999)

Neumann, D., Schwieger, W. and Lichtenberger, O.:
Accumulation of silicon in the monocotyledons Deschampsia caespitosa, Festuca lehmannii and Schoenus nigricans
Plant Biology 1, pp 290-298 (1999)

Pignolet, A., Alexe, M., Satyalakshmi, K. M., Senz, S., Hesse, D. and Gösele, U.:
Epitaxial Bi-layered perovskite ferroelectric thin film heterostructures by large area pulsed laser deposition
Ferroelectrics 225, pp 201-220 (1999)

Pignolet, A., Satyalakshmi, K. M., Zakharov, N. D., Harnagea, C., Senz, S., Hesse, D. and Gösele, U.:
Epitaxial bismuth-layer-structured perovskite ferroelectric thin films grown by pulsed laser deposition
Integrated Ferroelectrics 26, pp 21-29 (1999)

Pintilie, L. and Alexe, M.:
Photoconductivity of SrBi₂Ta₂O₉ thin films
Journal of the European Ceramic Society 19, (6-7), pp 1485-1488 (1999)

Pintilie, L., Pintilie, I. and Alexe, M.:
Photoconductive properties of Bi₄Ti₃O₁₂/Si heterostructures with different thickness of the Bi₄Ti₃O₁₂ films
Journal of the European Ceramic Society 19, (6-7), pp 1473-1476 (1999)

Pintilie, L., Pintilie, I., Petre, D., Botila, T. and Alexe, M.:
Trap characterization for Bi₄Ti₃O₁₂ thin films by thermally stimulated currents
Applied Physics A 69, (1), pp 105-109 (1999)

Pippel, E., Hähnel, A. and Woltersdorf, J.:
Stages of interlayer formation in the Si-C-O system
Silicates Industriels 64, pp 15-19 (1999)

Pippel, E., Woltersdorf, J., Pöckl, G. and Lichtenegger, G.:
Microstructure and nanochemistry of carbide precipitates in high-speed steel S 6-5-2-5
Materials Characterization 43, (1), pp 41-55 (1999)

Plekhanov, P. S., Gafiteanu, R., Gösele, U. and Tan, T.-Y.:
Modeling of gettering of precipitated impurities from Si of carrier lifetime improvement in solar cell applications
Journal of Applied Physics 86, pp 2453-2458 (1999)

Plößl, A. and Kräuter, G.:
Wafer direct bonding: tailoring adhesion between brittle materials
Materials Science & Engineering R 25, (1-2), pp 1-88 (1999)

Reiche, M., Priewasser, K.-H., Wittenzellner, E., Nauert, P. and Nadrag, W.:
Preparation of bonded wafer pairs.
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 200-208 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Reiche, M., Wiegand, M. and Dragoi, V.:
PLasma activation for low-temperature wafer direct bonding.
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 292-301 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Reiche, M., Wiegand, M., Stolze, D. and Schwarz, U.:
Bonding behavior of different interfacial layers.
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 100-109 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Reichling, M., Sils, J., Johansen, H. and Matthias, E.:
Nanosecond UV laser damage and ablation from fluoride crystals polished by different techniques
Applied Physics A 69, pp S743-S747 (1999)

Rinio, M., Möller, H. J. and Werner, M.:
LBIC investigations of lifetime degradation by extended defects in multicrystalline solar silicon
Solid State Phenomena 63-64, pp 115-122 (1999)

Rump, A., Gösele, U., Fischer, F., Hein, P., Marek, J., Münzel, H., Pintèr, S. and Schöfthaler, M.:
Investigation mechanisms of adhesion in MEMS by capacitance-voltage measurements with micromachined comb-structures.
Proceedings of the 10^th International Conference on Solid-State Senors and Actuators (Transducers'99) pp 500-503 (1999)

Satyalakshmi, K. M., Alexe, M., Pignolet, A., Zakharov, N. D., Harnagea, C., Senz, S. and Hesse, D.:
BaBi₄Ti₄O₁₅ ferroelectric thin films grown by pulsed laser deposition
Applied Physics Letters 74, (4), pp 603-605 (1999)

Satyalakshmi, K. M., Pignolet, A., Alexe, M., Zakharov, N. D., Harnagea, C., Senz, S., Reichelt, S., Hesse, D. and Gösele, U.:
All epitaxial BaBi₄Ti₄O₁₅-LaNiO₃ heterostructure
Materials Research Society Symposium Proceedings 541, pp 205-210 (1999)

Satyalakshmi, K. M., Zakharov, N. D., Koren, G. and Hesse, D.:
Atomic-scale structure and properties of thin epitaxial SrRuO₃ films grown on SrTiO₃
Materials Research Society Symposium Proceedings 541, pp 167-172 (1999)

Scheerschmidt, K., Belov, A. Y. and Conrad, D.:
Structure modelling by molecular dynamics: Analysis of TEM images of bonded interfaces
Institute of Physics Conference Series 161, pp 71-74 (1999)

Scheerschmidt, K.:
Inversion of dynamic scattering: Determination of local object-thickness and orientation
Institute of Physics Conference Series 161, pp 141-144 (1999)

Scholz, R., Giles, L.-F., Hopfe, S., Plößl, A. and Gösele, U.:
Void formation at the interface of bonded hydrogen-teminated (100) silicon wafers
Institute of Physics Conference Series 164, pp 439-442 (1999)

Scholz, R. F., Werner, P., Gösele, U. and Tan, T.-Y.:
The contribution of vacancies to carbon out-diffusion in silicon
Applied Physics Letters 74, (3), pp 392-394 (1999)

Schäfer, C., Kästner, G., Senz, S., Hesse, D., Lorenz, M., Hochmuth, H., Getta, M., Hein, M. A., Kaiser, T. and Müller, G.:
Mikrostruktur und Oberflächenwiderstand von HTSL-Dünnschichten für Mikrowellen-Rsonatoren
Supraleitung und Tieftemperaturtechnik 1998, Beiträge zum BMBF-Statusseminar Supraleitung und Tieftemperaturtechnik pp 169-172 VDI-Technologiezentrum, Düsseldorf, Germany (1999)

Schäfer, C., Senz, S., Kästner, G. and Hesse, D.:
Microstructural characterization of defects in HTSC thin films
Science and Engineering of HTC Superconductivity 23, pp 339-346 (Ed.) Vincenzini, P., Techna srl Publ., Faenza, Italy (1999)

Senz, S., Graff, A., Blum, W., Abicht, H.-P. and Hesse, D.:
The formation of fresnoite and Ti-rich phases during the solid state reaction between a BaTiO₃ (001) substrate and a thin SiO₂ film
Ceramics: Getting into the 2000's, Part A 13, pp 207-214 (Ed.) Vincenzini, P., Techna srl Publ., Faenza, Italy (1999)

Sils, J., Reichling, M., Matthias, E. and Johansen, H.:
Laser damage and ablation of differently prepared CaF₂ (111) surfaces
Czechoslovak Journal of Physics 49, pp 1737-1742 (1999)

Störmer, M., Sturm, K., Fähler, S., Weisheit, M., Winkler, J., Kahl, S., Kesten, P., Pundt, A., Seibt, M. and Senz, S.:
Study of laser-deposited metallic thin films by a combination of high-reolsution ex situ and time-resolved in situ experiments
Applied Physics A 69, pp S455-S457 (1999)

Timpel, D., Schaible, M. and Scheerschmidt, K.:
Molecular dynamics studies of silica wafer bonding
Journal of Applied Physics 85, (5), pp 2627-2635 (1999)

Tong, Q.-Y. and Gösele, U.:
Semiconductor wafer bonding: Science and technology
Wiley, New York, USA (1999)

Tong, Q.-Y. and Gösele, U.:
Wafer bonding and layer splitting for microsystems
Advanced Materials 11, (17), pp 1409-1425 (1999)

Tong, Q.-Y., Chao, Y.- L., Huang, L.-J. and Gösele, U.:
Low temperature InP layer transfer
Electronics Letters 35, (4), pp 341-342 (1999)

Tong, Q.-Y., Huang, L.-J., Chao, Y.- L., Chang, Q. and Gösele, U.:
IOS - a new type of materials combination for system-on-chip preparation
Proceedings of the 1999 IEEE International SOI Conference pp 104-105 IEEE, New York, USA (1999)

Tsatsulnikov, A. F., Volovik, B. V., Ledentsov, N. N., Maximov, M. V., Egorov, A. Y., Kovsh, A. R., Ustinov, V. M., Zhukov, A. E., Kop'ev, P. S., Alferov, Zh. I., Kozin, I. A., Belousov, M. V., Soshnikov, I.P., Werner, P., Litvinov, D., Fischer, U., Rosenauer, A. and Gerthsen, D.:
Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition
Journal of Electronic Materials 28, (5), pp 537-541 (1999)

Ustinov, V. M., Egorov, A. Y., Zhukov, A. E., Kovsh, A. R., Ledentsov, N. N., Maximov, M. V., Volovik, B. V., Tsatsulnikov, A. F., Kop'ev, P. S., Alferov, Zh. I., Soshnikov, I.P., Zakharov, N. D., Werner, P. and Bimberg, D.:
1.75 mm emission from self-organized InAs quantum dots on GaAs
Journal of Crystal Growth 202, pp 1143-1145 (1999)

Vlasov, I., Ralchenko, V., Zakharov, D. N. and Zakharov, N. D.:
Intrinsic stress origin in high quality CVD diamond films
Physica Status Solidi A 174, (1), pp 11-18 (1999)

Volovik, B. V., Tsatsulnikov, A. F., Bedarev, D. A., Egorov, A. Y., Zhukov, A. E., Kovsh, A. R., Ledentsov, N. N., Maksimov, M. V., Maleev, N. A., Musikhin, Y. G., Suvorova, A. A., Ustinov, V. M., Kop'ev, P. S., Alferov, Zh. I., Bimberg, D. and Werner, P.:
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
Semiconductors 33, (8), pp 901-905 (1999)

Völtzke, D., Gablenz, S., Abicht, H.-P., Schneider, R., Pippel, E. and Woltersdorf, J.:
Surface modification of barium titanate powder particles
Materials Chemistry and Physics 61, (2), pp 110-116 (1999)

Wakayama, Y., Tagami, T. and Tanaka, S.:
Three-dimensional islands of Si and Ce formed on SiO₂ through crystallization and agglomeration from amorphous thin films
Thin Solid Films 350, (1-2), pp 300-307 (1999)

Wanderka, N., Wei, Q., Sieber, I., Czubayko, U. and Macht, M.-P.:
Identification of primary crystals in ZrTiCuNiBe metallic bulk glasses
Materials Science Forum 312-314, pp 369-374 (1999)

Wei, Q., Pippel, E., Woltersdorf, J. and Grabke, H.-J.:
Microprocesses of coke formation in metal dusting
Materials and Corrosion 50, pp 628-633 (1999)

Wiegand, M., Kräuter, G. and Reiche, M.:
Effect of O₂ plasma pretreatment on the bonding behavior of silicon (100) wafers.
Proceedings of the 5^th International Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications 99-35, pp 282-291 (Eds.) Hunt, C. E., Abe, T., Baumgart, H. and Gösele, U., The Electrochemical Society, (1999)

Woltersdorf, J., Feldhoff, A. and Pippel, E.:
Bildung und Kristallographie ternärer Carbide in C/Mg-Al-Compositen und ihr Einfluß auf die Verbundeigenschaften.
Verbundwerkstoffe und Werkstoffverbunde pp 147-152 (Eds.) Schulte, K. and Kainer, K. U., Wiley-VCH, New York, USA (1999)

Zakharov, N. D., Satyalakshmi, K. M., Koren, G. and Hesse, D.:
Substrate temperature dependence of structure and resistivity of SrRuO₃ thin films grown by PLD on (100)SrTiO₃
Journal of Materials Research 14, (11), pp 4385-4394 (1999)

Zakharov, N. D., Satyalakshmi, K. M., Koren, G. and Hesse, D.:
Lattice defects in SrRuO₃ thin films and their contribution to film resistivity.
Materials Research Society Symposium Proceedings 574, pp 113-118 (1999)

Zakharov, N. D., Werner, P., Ustinov, G. E., Cirlin, G. E., Smolski, O.V., Denisov, D. V., Alferov, Zh. I., Ledentsov, N. N., Heitz, R. and Bimberg, D.:
Structure of stacked InAs quantum dots in a Si matrix: HRTEM experimental results and modelling
Proceedings of the 7^th International Symposium on Nanostructures: Physics and Technology pp 216-219 (Ed.) Alferov, Zh. I., Nauka, St. Petersburg, Russia (1999)

Zakharov, N. D., Werner, P., Zibrov, I. P., Filonenko, V. P. and Sundberg, M.:
Intergrowth tungsten bronze structures of Pr_xWO₃ formed at 50kbar; an HRTEM study
Journal of Solid State Chemistry 147, (2), pp 536-544 (1999)

Zeng, J. M., Lin, C. L., Zheng, L. R., Pignolet, A., Alexe, M., Richter, E. and Hesse, D.:
Effect of H⁺ and O⁺ implantation on electrical properties of SrBi₂Ta₂O₉ ferroelectric thin films
Nuclear Instruments & Methods in Physics Research, Section B 147, (1-4), pp 207-211 (1999)

Zeng, J. M., Zheng, L. R., Lin, C. L., Alexe, M., Pignolet, A. and Hesse, D.:
The structural and electric behavior of SrBi₂Ta₂O₉ ferroelectric thin films with H⁺ implantation
Physics Letters A 251, (5), pp 336-339 (1999)

Zhang, M. O., Zeng, X. C., Chu, P. K., Scholz, R. and Lin, C. L.:
Gettering of Cu by microcavities in bonded/ion-cut silicon-on-insulator and separation by implantation of oxygen
Journal of Applied Physics 86, pp 4214-4219 (1999)

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