Silicon Nanowires by UHV-CVD
Abstract
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The transition from an eutectic droplet sitting on a flat substrate surface to a droplet on top of a cylindrical wire requires a gradual change of the diameter. As a result the foot of a nanowire has an increased diameter.
The modelling of nanowire growth predicts a transition from ordinary growth to a hillock mode, if the relative ratio of surface and line tensions is varied. Citation:
Schmidt, V., Senz, S. and Gösele, U.:
The shape of epitaxially grown silicon nanowires and the influence of line tension
Applied Physics A 80, (3), pp 445-450 (2005)