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Interfaces and Material Systems
UHV-Wafer Bonding
Abstract
People
Publications
Alumni
2006
Fecioru, A. M. , S. Senz , R. Scholz , and U. Gösele
Silicon layer transfer by hydrogen implantation combined with wafer bonding in ultra-high vacuum
.
Applied Physics Letters
89
(19) , p 192109/1-3 (2006)
2004
Akatsu, T. , R. Scholz , and U. Gösele
Dislocation structure in low-angle interfaces between bonded Si (001) wafers
.
Journal of Materials Science
39
(9) , p 3031-3039 (2004)
2003
Reznicek, A. , R. Scholz , S. Senz , and U. Gösele
Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding
.
Materials Chemistry and Physics
81
, p 277-280 (2003)
2001
Akatsu, T. , A. Plößl , R. Scholz , H. Stenzel , and U. Gösele
Wafer bonding of different III-V compound semiconductors by atomic hydrogen surface cleaning
.
Journal of Applied Physics
90
(8) , p 3856-3862 (2001)
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