Abstract | ![](images/leer.gif) | People | ![](images/leer.gif) | Publications | ![](images/leer.gif) | Alumni | ![](images/leer.gif) |
|
Room temperature UHV wafer bonding of GaAs to Si![](clear.gif)
S. Senz and A. Fecioru
Creation of Si-GaAs interfaces via UHV wafer bonding.
TEM cross-section image. Misfit dislocations are indicated by circles.
Electrical characterization of n-GaAs bonded to p-Si.
![](uploads/RTEmagicC_Si-GaAs_plot.png.png)