Interface Reactions in the Si-C-O SystemThe ternary system Si-C-O constitutes the basis of different multi-purpose high-performance materials which can combine interesting electronic properties with high temperature stability, chemical inertness, and high strength and hardness. A tailoring of the microstructures with respect to the special demands is possible via an appropriate interface design. The understanding of the nano-processes and of the complex kinetics of the forming interlayers can enable such a design by choosing suitable processing parameters and catalysts. In this way even an atomic structuring of the relevant interlayers is possible.