Prof. Ulrich M. Gšsele

Ulrich Gösele

25.01.1949 - 08.11.2009

Director and Scientific Member at the

Max Planck Institute of Microstructure Physics

Weinberg 2 
06120 Halle 
GERMANY 
 


 
CURRICULUM VITAE   |   RESEARCH PUBLICATIONS  |  SCIENTIFIC AWARDS
BOOK   |   PATENTS  ART & DESIGN


 

Curriculum Vitae


Research Interests:


Publications:

Out of more than 400 publications in refereed journals, which have been cited collectively more than 10,000 times, leading to an h-factor of 55 (April 2007), a selection of 10 publications, published after 1990 is given:

Wang, Y., V. Schmidt, S. Senz, S., and U. Gösele.
Epitaxial growth of silicon nanowires using an aluminium catalyst.
Nature Nanotechnology 1, 186-189 (2006).

Lee, W., R. Ji, U. Gösele and K. Nielsch.
Fast fabrication of long-range ordered porous alumina membranes by hard anodization.
Nature Materials 5, 741-747 (2006).

Fan, H. J., M. Knez, R. Scholz, K. Nielsch, E. Pippel, D. Hesse, M. Zacharias, and U. Gösele.
Monocrystalline spinel nanotube fabrication based on the Kirkendall effect.
Nature Materials 5, 627-631 (2006).

Chu, M.-W., I. Szafraniak, R. Scholz, C. Harnagea, D. Hesse, M. Alexe, and U. Gösele.
Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites.
Nature Materials 3, 87-90 (2004).

Steinhart, M., J. H. Wendorff, A. Greiner, R. B. Wehrspohn, K. Nielsch, J. Schilling, J. Choi, and U. Gösele.
Polymer nanotubes by wetting of ordered porous templates.
Science 296, 1997 (2002).

Lee, H. N., D. Hesse, N. D. Zakharov, and U. Gösele.
Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates.
Science 296, 2006-2009 (2002).

Zakharov, N. D., P. Werner, U. Gösele, G. Gerth, G. E. Cirlin, V. A. Egorov, and B. V. Volovik.
Structure and optical properties of Ge/Si superlattice grown on Si substrates by MBE at different temperatures.
Materials Science & Engineering B 87, 92-95 (2001).

Nielsch, K., F. Müller, A. P. Li, and U. Gösele.
Uniform nickel deposition into ordered alumina pores by pulsed electrodeposition.
Advanced Materials 12, 582-586 (2000).

Kirstaedter, N., N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, S. S. Ruvimov, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, U. Richter, P. Werner, U. Gösele, and J. Heydenreich.
Low threshold, large T0 injection laser emission from (InGa)As quantum dots.
Electronics Letters 30, 1416-1417 (1994).

Lehmann, V. and U. Gösele.
Porous silicon formation: A quantum wire effect.
Applied Physics Letters 58, 656-658 (1991).

further publications

Scientific Awards/Memberships

  • 1999 Electronics Division Award of the Electrochemical Society
  • K. u. K. Böhmisch Physikalische Gesellschaft
  • Deutsche Physikalische Gesellschaft
  • American Physical Society, Fellow
  • Institute of Physics, Fellow
  • Electrochemical Society
  • Friends of the Weizmann-Institute
  • Deutsche Akademie der Naturforscher Leopoldina
  • Board of Directors, Materials Research Society (2002-2005)
  • Information Science Award (2005)
  • Honorary Professor, Chinese Academy of Sciences

Books

Semiconductor Wafer Bonding
Science and Technology
Wiley, 1999
ISBN: 0-471-57481-3
 
 

Q.-Y. Tong
U. Gösele


Wafer Bonding
Applications and Technology
Springer, 2004
ISBN: 3-540-21049-0
 
 

M. Alexe
U. Gösele (Eds.)


Patents (selection)

US Patent No. 4,883,215 and 4,962,876
Bubble-free bonding of silicon wafers

US Patent No. 5,024,723
Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning

US Patent No. 5,206,523
Microporous crystalline silicon of increased band-gap for semiconductor applications

US Patent No. 5,877,070
Method for the transfer of thin layers of monocrystalline material to a desirable substrate


Art & Design



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last update: February 16, 2007