The fabrication of sSOI wafers, their characterization and application to advanced integrated devices are the objectives of the project “Tetragonally strained silicon for nanoelectronics” (TESIN). The project starts in May 2004 for a period of 3 years. An extension for an additional year (up to April 2008) is realized by TESIN+.
The project combines research activities of
All project partners are also partners within the