The integrated EU-project NODE ("Nanowire-based One-Dimensional Electronics") focuses on an innovative bottom-up approach to fabrication and integration of nanoelectronic devices, based on self-assembling semiconductor nanowires. The primary target is to deliver replacement and add-on technologies to silicon CMOS, such as FET devices for logic and III-V bipolar transistors for RF applications. NODE will study key device families based on semiconductor nanowires, assess their compatibility with conventional semiconductor processing, and evaluate novel architectural concepts and their implementation scenarios. It is the overall objective of the NODE Integrated Project to demonstrate that nanowire-based device technology is the disruptive technology needed for long-term innovation and growth in the electronics industry. NODE hereby takes on the challenge as formulated in the IST Work Programme: “Breaking new barriers with current CMOS technology below 10 nanometers as well as the exploration of alternative materials”.
An artist's conception of nanowire devices on a silicon substrate (image courtesy of Martin Persson).
detailed information in:
Partners in NODE:
Lund University, TU Würzburg, TU Delft, MPI Halle, Philips Research Center in Eindhoven, IBM Research Center in Zürich, Scuola Normale Superiore Pisa, IMEC Leuven, Philips Innovative Technology Solutions in Leuven, Qumat Technologies in Lund, Qimonda GmbH in München, Commissariat á l’Energie Atomique (CEA) in Grenoble
C. Thelander, P. Agarwal, S. Brongersma, J. Eymery, L. F. Feiner, A. Forchel, M. Scheffler, W. Riess, B. J. Ohlsson, U. Gösele, and L. Samuelson
“Nanowire-based one-dimensional electronics”, Materials Today (2006) vol. 9 (10) p. 28