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The combination of a new generation of strained silicon on insulator (sSOI) substrates (diameter 300 mm) with novel local stressors (reverse embedded SiGe) and high-k dielectrica are the main issues within the DECISIF project to increase the performance of fully depleted (FD) ultra thin body (UTB) as well as partially depleted (PD) SOI MOSFETs at 45 nm node and below.
DECISIF is a MEDEA+ project combining research activities of German and French partners from industrial companies and research institutes. According to the regulations of MEDEA+, the DECISF project is nationally funded by the German Federal Ministry of Education and Research.
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Project PartnersMethods to introduce strain in MOSFET channelsLocal Strain (Process-Induced Strain)Global StrainPatterning and characterization of strain in sSOI materials
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