Basic analysis to the light emission by dislocations in Si and the realization of Si-based light emitters are carried out within the project „Integrable Silicon Emitters and Detectors for Optical, CMOS Compatible on Chip Signal Communication (SILEM)” financially funded by the German Federal Ministry of Education and Research (BMBF). The project starts in August 2006 for a period of 2 years.
The project combines research activities of the
to realize and optimize integrable light emitters and detectors in CMOS compatible materials. The final goals of the project are models, design, and the demonstration of on chip solutions of complete systems for optical data communication in future electronic devices.
Further research activities to the structure and properties of dislocations and dislocation networks formed in the interface of hydrophobically bonded silicon wafers are concentrated in the SOBSI project. This project is a cooperation of the
to apply dislocation arrangements to the self-organized pattern formation of biomolecules at silicon interfaces. This project is funded by the Volkswagenstiftung, Hannover, for a period of 3 years (2004 – 2007).