Self-organization is a promising way to grow nanostructures with feature sizes in the sub-µm-range. If the anodizing conditions, such as applied potential, electrolyte concentration and temperature match self-ordering conditions, self-ordered porous alumina structures with an interpore distance of 50 to 500 nm can be obtained. The pores at the formation front will be arranged in a hexagonal lattice. In addition, we present in these Webpages the technique of imprint lithography (lL). SEM images show the master stamp as well as porous alumina fabricated by IL. The novel method of interference lithography as well as the advantages of hard anodization are demonstrated by examples.