Silicon nanowires are grown in one chamber of a large UHV wafer-bonding system. A silicon wafer is covered by a thin gold film with less than 1 nm nominal thickness. The gold film forms small islands during heating above the eutectic temperature of Au-Si (approx. 360ºC).
The chamber is filled by silane up to a partial pressure of around 0.1 mbar. The wires grow within a few minutes.