UHV-Wafer Bonding

Abstract

AbstractPeoplePublicationsAlumni
Room temperature UHV wafer bonding of GaAs to Si


S. Senz and A. Fecioru

 

Creation of Si-GaAs interfaces via UHV wafer bonding.

 

 

 

TEM cross-section image. Misfit dislocations are indicated by circles.

 

 

 

Electrical characterization of n-GaAs bonded to p-Si.

 


back  |  print  |  to top