UHV-Wafer Bonding
Abstract
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S. Senz and A. Fecioru
Creation of Si-GaAs interfaces via UHV wafer bonding.
TEM cross-section image. Misfit dislocations are indicated by circles.
Electrical characterization of n-GaAs bonded to p-Si.
|
S. Senz and A. Fecioru
Creation of Si-GaAs interfaces via UHV wafer bonding.
TEM cross-section image. Misfit dislocations are indicated by circles.
Electrical characterization of n-GaAs bonded to p-Si.