UHV-Wafer Bonding
Abstract
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S. Senz and A. Fecioru
Direct transfer of Si onto Si is achieved (without the involvement of any oxide layers) by means of UHV bonding. Hydrogen desorption was done in-situ, by KrF excimer laser pulses.
TEM investigations were performed in order to confirm that our Si to Si interfaces are smooth and oxidefree.
A pn junction was fabricated by transferring a 500 nm Si layer (n-type) onto a p-type Si substrate. Annealing was performed at 1000ºC in hydrogen atmosphere.
Details have been published in: Appl. Phys. Lett. 89, 172907 (2006).