UHV-Wafer Bonding


Oxide free layer transfer by UHV wafer bonding

S. Senz and A. Fecioru


Direct transfer of Si onto Si is achieved (without the involvement of any oxide layers) by means of UHV bonding. Hydrogen desorption was done in-situ, by KrF excimer laser pulses.




TEM investigations were performed in order to confirm that our Si to Si interfaces are smooth and oxidefree.




A pn junction was fabricated by transferring a 500 nm Si layer (n-type) onto a p-type Si substrate. Annealing was performed at 1000ºC in hydrogen atmosphere.



Details have been published in: Appl. Phys. Lett. 89, 172907 (2006).

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