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Interfaces and Material Systems

MD-Simulations Wafer Bonding

Abstract

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Alumni

2006

Scheerschmidt, K.
Empirical molecular dynamics: Possibilities, requirements and limitations.
In: Theory of Defects in Semiconductors 104 , Ed. D. A. Drabold , S. K. Estreicher p 213-244 Springer, Heidelberg, Germany (2006)

2004

Scheerschmidt, K. , and V. Kuhlmann
Molecular dynamics investigation of bonded twist boundaries.
Interface Science 12 (2/3) , p 157-163 (2004)

2003

Scheerschmidt, K. , and V. Kuhlmann
Nanostructures simulated by molecular dynamics for TEM analysis.
Microscopy and Microanalysis 9 , p 232-233 (2003)

2002

Scheerschmidt, K. , D. Conrad , and A. Y. Belov
Atomic processes at bonded Si-interfaces studied by molecular dynamics: Tayloring densities and bandgaps?.
Computational Materials Science 24 , p 33-41 (2002)

2001

Koitzsch, C. , D. Conrad , K. Scheerschmidt , F. Scharmann , P. Maslarski , and J. Petzold
Carbon-induced reconstructions on Si(111) investigated by RHEED and molecular dynamics.
Applied Surface Science 179 , p 50-55 (2001)

Scheerschmidt, K. , D. Conrad , and Y.-Ch. Wang
Tight-binding-based potentials: Molecular dynamics of wafer bonding.
Computational Materials Science 22 , p 56-61 (2001)

2000

Wang, Y.-Ch. , K. Scheerschmidt , and U. Gösele
Theoretical investigations of bond properties in graphite and graphitic silicon..
Physical Review B 61 , p 12864-12870 (2000)

1999

Belov, A. Y. , R. Scholz , and K. Scheerschmidt
Dissociation of screw dislocations in (001) low-angle twist boundaries: a source of the 30 degrees partial dislocations in silicon.
Philosophical Magazine Letters 79 (8) , p 531-538 (1999)

1998

Belov, A. Y. , D. Conrad , K. Scheerschmidt , and U. Gösele
Atomic study of the (001) 90^o twist grain boundary in silicon.
Philosophical Magazine A 77 , p 55-65 (1998)

Scheerschmidt, K. , D. Conrad , A. Y. Belov , and H. Stenzel
UHV-silicon wafer bonding at room temperature: Molecular dynamics and experiments.
Electrochemical Society Proceedings 97-36 , p 381-392 (1998)

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