Interfaces and Material Systems

Interface Reactions in the Si-C-O System

Interface Reactions in the Si-C-O System

The ternary system Si-C-O constitutes the basis of different multi-purpose high-performance materials which can combine interesting electronic properties with high temperature stability, chemical inertness, and high strength and hardness. A tailoring of the microstructures with respect to the special demands is possible via an appropriate interface design. The understanding of the nano-processes and of the complex kinetics of the forming interlayers can enable such a design by choosing suitable processing parameters and catalysts. In this way even an atomic structuring of the relevant interlayers is possible.


Thermodynamics of nanoprocesses
Atomic structuring of carbon layers
Interfaces in SiC-MOS devices
Role of transition metal catalysts

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